In the not-too-distant future, the size of the microelectronic devices predicted by Moore's Law will scale to a series of physical limits. This technological advance has driven researchers to use nanotechnology for a completely quantum-based information processing solution. After nearly two decades of development, the semiconductor quantum dot spin-bit solid-state device has become one of the most promising solid-state quantum computing solutions due to its controllability and scalability. At present, it has become a fusion of Condensed matter theory, quantum physics, nano-processing technology, nano-electronics, low temperature technology, semiconductor technology and other research direction of the frontier cross-cutting research.
Recently, Xu Hongqi, a professor of Peking University's Key Program of Solid State Devices at Beijing Institute of Information Science and Technology, and a research group led by Zhao Jianhua, a key member of the State Key Laboratory of Semiconductor Superlattices, Institute of Semiconductors, Chinese Academy of Sciences, Indium arsenide (InAs) nanowires have been prepared with high tunability semiconductor-coupled quantum dots quantum devices, and the electronic device steady-state configuration, coherent transport and electrons in the distance between the quantum dots through the virtual auxiliary The physical process of tunneling for long-range switching has been finely measured. This study shows that a semiconductor triplet-based linear triple quantum dot system can be used as a universal quantum device platform and has the potential to build spin quantum bit devices and quantum computing chips with long coherence times, fully electrical regulation.
Semiconductor InAs materials have higher electron mobility, smaller electron effective mass, larger Landenes and stronger spin-orbit coupling. In this study, a joint research group using advanced local bottom finger gate array technology, single-crystal single-phase pure InAs nanowires tandem structure coupled to the three-quantum dot structure, which limits the quantum barrier local quantum, quantum The electrochemical potential at the point and the tunneling coupling strength between the quantum dots can all be controlled independently. The measurement and regulation of the transport properties of the quantum dots are accomplished in a cryogenic dilution refrigerator. This work is the first in a semiconductor InAs nanowire triple quantum dot device with fine gate control technology to achieve the three-quantum dot coherent resonance coupling marked by energy degeneracy. The study also confirmed by electron coherence transport measurements that in the middle of the quantum dot in the Coulomb obstruction state, the quantum dots isolated by the middle of the two quantum dots can still be achieved by co-tunneling between the strong coherent coupling, the single electron can Long-range coherent exchange between the two quantum dots at the far end to reveal the physical process of the super-exchange interaction.
The related research results are based on "Coherent transport in a linear triple quantum dot made from a pure-phase InAs nanowire", entitled "Pure Phase InGaAs Nanowires Based on the Study of Electron Coherent Transport Properties" , Published in June 2017 on the Nano Letters; DOI: 10.1021 / acs.nanolett.7b00927. Wang Jianyin, a Ph.D. candidate from School of Information Science and Technology, Peking University, is the co-author of the first author, Professor Xu Hongqi and Associate Professor Huang Shaoyun.
The above research work has been supported by the national key research and development plan, the major national scientific research plan, the National Natural Science Foundation of China and the doctoral program of higher education.
(Left) Schematic diagram of single-crystal pure-phase InAs nanowire triple quantum dot device with local bottom-fingered gate regulation; (right) a two-dimensional charge steady state plot of the measured three quantum dot devices
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