Shanghai Microsystems GaAs arsenic and bismuth quantum well laser research progress

Recent progress has been made in the research of gallium arsenide and bismuth (GaAsBi) quantum well lasers at the Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences. Researcher Wang Shu-min led a team of researchers that used molecular beam epitaxy to grow gallium arsenide-bismuth quantum well materials and successfully fabricated an electrically pumped gallium arsenic arsenide room-temperature (300 K) quantum well laser with the longest emission wavelength (1.142 microns) Before breaking the world record of 1.06 microns, the maximum output power of pulsed lasers reached 127 mW and was first reported at 273 K for continuous lasing. Related Research Papers 1.142 μm GaAsBi / GaAs Quantum Well Lasers Grown by Molecular Beam Epitaxy was published on ACS Photonics (DOI: 10.1021 / acsphotonics.7b00240) on June 5th.

Diluted bismuth semiconductor material has a series of excellent characteristics different from the traditional three five family material, is a promising new photoelectric device materials, is also one of the hot areas in the current international research. Gallium arsenic is one of the most promising new materials for uncooled lasers in optical communication systems due to its large band gap shrinkage effect, spin orbit splitting energy and low temperature sensitivity. However, in order to effectively coagulate the bismuth component, gallium arsenide bismuth material growth requires a lower temperature, which easily lead to an increase in defect density and thus affect the material's luminescent properties, laser material growth has great challenges. Shanghai Microsystems Wu Xiaoyan, Pan Wenwu, who based on molecular beam epitaxy technology to optimize the growth of high-quality gallium arsenide and bismuth quantum well material, the successful preparation of high-performance gallium arsenide bismuth quantum well lasers, the emission wavelength extends to 1.142 microns, while its The characteristic temperature and wavelength temperature coefficient are superior to the current commercial InP-based lasers. This research will help to promote the application of new rare-earth bismuth materials in optoelectronic devices.

This work has been funded by the "973" project and key projects of the National Natural Science Foundation of China.

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