ReRAM is about to enter the 3D era

Moscow Institute of Physics and Technology (MIPT) Announces Successfully Developed ReRAM Process to Enable Thin Film Technology for 3D Stacking ...

ReRAM is a "universal" memory that is expected to replace a variety of Other memory types, providing not only the speed of random access memory (RAM) but also flash memory Density and non-volatility of the flash. However, at present, flash is better than ReRAM due to being the first to enter the 3D era.

Researchers at the Moscow Institute of Physics and Technology (MIPT) have now succeeded in developing new processes for ReRAM that are expected to enable thin film technology for 3D stacking.

Research and development of ReRAMs generally employ a memristor in which the oxygen vacancy that migrates in the dielectric layer changes the electrical resistance of the dielectric to '1' and '0'. In addition to MIPT, researchers from 4DS Memory Ltd., Crossbar Inc., HP Inc., Knowm Inc., and Rice University in Texas, USA, prototyped ReRAM.

For 3D ReRAM, MIPT scientist Konstantin Egorov said: "Not only do we need to create an oxygen vacancy in the dielectric layer, we also have to test it." For this reason, researchers at MIPT have adopted a method of observing the electron state in their energy gap in the dielectric layer where oxygen vacancy occurs.

Egorov said: "In order to study the oxygen vacancies formed during the growth of tantalum oxide films, we used an integrated growth PEALD (Plasma Assisted Atomic Layer Deposition) and analytical XPS (X-ray photoelectron spectroscopy) chamber Interconnected) cluster of experiments that allows us to grow and study the sediments without damaging the vacuum. "

He emphasizes, "It is very important, because once the experimental sample is removed from the vacuum, the dielectric nanolayer oxidizes on its surface, resulting in the disappearance of oxygen vacancies."

Experimental cluster for growth and research of thin films, enabling 3D stacking under vacuum (Source: MIPT)

This unique atomic layer deposition (ALD) cluster can be constructed by any semiconductor research laboratory by connecting the PEALD and XPS chambers, then adding robots to transfer wafers between the chambers. In addition to sample test wafers, such clusters are not required in mass production. However, an assembly line must be established to compensate for the slow growth of the ALD film.

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